SUBSTRATE PROCESSING APPARATUS

Provided is a reactor capable of improving the symmetry of the profile of a thin film deposited on a substrate with an asymmetric exhaust structure, wherein a distance between a gas flow control ring (FCR) and an exhaust unit on one side where an exhaust port is located is greater than a distance be...

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Bibliographische Detailangaben
Hauptverfasser:	Kim, YoungSim, Kim, YoungMin, Ryu, JiHwan, Jeong, YongWoong, Kim, TaeWoong
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided is a reactor capable of improving the symmetry of the profile of a thin film deposited on a substrate with an asymmetric exhaust structure, wherein a distance between a gas flow control ring (FCR) and an exhaust unit on one side where an exhaust port is located is greater than a distance between the FCR and the exhaust unit on the opposite side of the exhaust port.