Method of Laser Treatment of a Semiconductor Wafer Comprising AlGaInP-LEDs to Increase their Light Generating Efficiency

Embodiments provide a method for treating a semiconductor wafer comprising a set of aluminum gallium indium phosphide light emitting diodes (AlGaInP-LEDs) to increase a light generating efficiency of the AlGaInP-LEDs, wherein each AlGaInP-LED includes a core active layer for light generation sandwiched between two outer layers, the core active layer having a central light generating area and a peripheral edge surrounding the central light generating area, wherein the method includes treating the peripheral edge of the core active layer of each AlGaInP-LED with a laser beam thereby increasing a minimum band gap in each peripheral edge to such an extent that, during operation of the AlGaInP-LED, an electron-hole recombination is essentially confined to the central light generating area.