FABRICATING A SEMICONDUCTOR STRUCTURE WITH MULTIPLE QUANTUM WELLS

A method of fabricating a semiconductor structure with multiple quantum wells, comprising: providing a substrate comprising a binary semiconductor compound having a first lattice constant; depositing: a first layer on the substrate, the first layer of a first semiconductor alloy, and a second layer in contact with the first layer, the second layer of a second semiconductor alloy, to form a first stack of substantially planar semiconductor layers on the substrate; depositing in contact with the first stack a third layer of a binary semiconductor compound having the first lattice constant; depositing at least: a fourth layer on the third layer, the fourth layer comprising a third semiconductor alloy comprising InP, and a fifth layer in contact with the fourth layer, the fifth layer comprising a fourth semiconductor alloy comprising InP, to form a second stack of substantially planar semiconductor layers on the third layer.