DUMMY VERTICAL TRANSISTOR STRUCTURE TO REDUCE CROSS TALK IN PIXEL SENSOR

Various embodiments of the present disclosure are directed towards a method for forming an image sensor, the method includes forming a photodetector in a substrate. A first vertical gate electrode is formed extending into a first surface of the substrate. The first vertical gate electrode is adjacen...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Chou, Shih-Pei, Tsao, Tsun-Kai, Lu, Jiech-Fun
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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