DUMMY VERTICAL TRANSISTOR STRUCTURE TO REDUCE CROSS TALK IN PIXEL SENSOR

DUMMY VERTICAL TRANSISTOR STRUCTURE TO REDUCE CROSS TALK IN PIXEL SENSOR

Various embodiments of the present disclosure are directed towards a method for forming an image sensor, the method includes forming a photodetector in a substrate. A first vertical gate electrode is formed extending into a first surface of the substrate. The first vertical gate electrode is adjacen...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chou, Shih-Pei, Tsao, Tsun-Kai, Lu, Jiech-Fun
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Various embodiments of the present disclosure are directed towards a method for forming an image sensor, the method includes forming a photodetector in a substrate. A first vertical gate electrode is formed extending into a first surface of the substrate. The first vertical gate electrode is adjacent to a first side of the photodetector. A second vertical gate electrode is formed extending into the first surface of the substrate. The second vertical gate electrode is adjacent to a second side of the photodetector opposite the first side.