METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING CONDUCTIVE PAD STRUCTURES WITH MULTI-BARRIER FILMS

METHODS OF FABRICATING SEMICONDUCTOR DEVICES HAVING CONDUCTIVE PAD STRUCTURES WITH MULTI-BARRIER FILMS

Methods of fabricating semiconductor devices are provided. The method includes forming an interconnect structure over a substrate. The method also includes forming a passivation layer over the interconnect structure. The method further includes forming an opening in the passivation layer to expose a...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEE, Ing-Ju, HUANG, Po-Hsun, CHEN, Chao-Lung, WU, Cheng-Ming, WANG, Po-Han
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods of fabricating semiconductor devices are provided. The method includes forming an interconnect structure over a substrate. The method also includes forming a passivation layer over the interconnect structure. The method further includes forming an opening in the passivation layer to expose a portion of the interconnect structure. In addition, the method includes sequentially forming a lower barrier film, an upper barrier film, and an aluminum-containing layer in the opening. The lower barrier film and the upper barrier film are made of metal nitride, and the upper barrier film has a nitrogen atomic percentage that is higher than a nitrogen atomic percentage of the lower barrier film and has an amorphous structure.