CURRENT APERTURE IN MICRO-LED THROUGH STRESS RELAXATION

CURRENT APERTURE IN MICRO-LED THROUGH STRESS RELAXATION

A micro-light emitting diode (micro-LED) includes a mesa structure that includes an n-type semiconductor layer, a p-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. The active region includes at least one quantum well layer. Th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: GRUNDMANN, Michael, HURNI, Christophe Antoine, TYAGI, Anurag
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator GRUNDMANN, Michael
HURNI, Christophe Antoine
TYAGI, Anurag
description A micro-light emitting diode (micro-LED) includes a mesa structure that includes an n-type semiconductor layer, a p-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. The active region includes at least one quantum well layer. The at least one quantum well layer has a first effective bandgap and a first stress in a center region of the at least one quantum well layer, and a second effective bandgap and a second stress in a mesa sidewall region of the at least one quantum well layer. The second stress is lower than the first stress or is opposite to the first stress. The second effective bandgap is greater than the first effective bandgap to form a lateral carrier barrier in the at least one quantum well layer.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022231192A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022231192A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022231192A13</originalsourceid><addsrcrecordid>eNrjZDB3Dg0KcvULUXAMcA0KCQ1yVfD0U_D1dA7y1_VxdVEI8QjyD3X3UAgOCXINDlYIcvVxjHAM8fT342FgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGRkbGhoaWRo6GxsSpAgD8aylc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CURRENT APERTURE IN MICRO-LED THROUGH STRESS RELAXATION</title><source>esp@cenet</source><creator>GRUNDMANN, Michael ; HURNI, Christophe Antoine ; TYAGI, Anurag</creator><creatorcontrib>GRUNDMANN, Michael ; HURNI, Christophe Antoine ; TYAGI, Anurag</creatorcontrib><description>A micro-light emitting diode (micro-LED) includes a mesa structure that includes an n-type semiconductor layer, a p-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. The active region includes at least one quantum well layer. The at least one quantum well layer has a first effective bandgap and a first stress in a center region of the at least one quantum well layer, and a second effective bandgap and a second stress in a mesa sidewall region of the at least one quantum well layer. The second stress is lower than the first stress or is opposite to the first stress. The second effective bandgap is greater than the first effective bandgap to form a lateral carrier barrier in the at least one quantum well layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220721&amp;DB=EPODOC&amp;CC=US&amp;NR=2022231192A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,781,886,25569,76552</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20220721&amp;DB=EPODOC&amp;CC=US&amp;NR=2022231192A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>GRUNDMANN, Michael</creatorcontrib><creatorcontrib>HURNI, Christophe Antoine</creatorcontrib><creatorcontrib>TYAGI, Anurag</creatorcontrib><title>CURRENT APERTURE IN MICRO-LED THROUGH STRESS RELAXATION</title><description>A micro-light emitting diode (micro-LED) includes a mesa structure that includes an n-type semiconductor layer, a p-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. The active region includes at least one quantum well layer. The at least one quantum well layer has a first effective bandgap and a first stress in a center region of the at least one quantum well layer, and a second effective bandgap and a second stress in a mesa sidewall region of the at least one quantum well layer. The second stress is lower than the first stress or is opposite to the first stress. The second effective bandgap is greater than the first effective bandgap to form a lateral carrier barrier in the at least one quantum well layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDB3Dg0KcvULUXAMcA0KCQ1yVfD0U_D1dA7y1_VxdVEI8QjyD3X3UAgOCXINDlYIcvVxjHAM8fT342FgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGRkbGhoaWRo6GxsSpAgD8aylc</recordid><startdate>20220721</startdate><enddate>20220721</enddate><creator>GRUNDMANN, Michael</creator><creator>HURNI, Christophe Antoine</creator><creator>TYAGI, Anurag</creator><scope>EVB</scope></search><sort><creationdate>20220721</creationdate><title>CURRENT APERTURE IN MICRO-LED THROUGH STRESS RELAXATION</title><author>GRUNDMANN, Michael ; HURNI, Christophe Antoine ; TYAGI, Anurag</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022231192A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>GRUNDMANN, Michael</creatorcontrib><creatorcontrib>HURNI, Christophe Antoine</creatorcontrib><creatorcontrib>TYAGI, Anurag</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>GRUNDMANN, Michael</au><au>HURNI, Christophe Antoine</au><au>TYAGI, Anurag</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CURRENT APERTURE IN MICRO-LED THROUGH STRESS RELAXATION</title><date>2022-07-21</date><risdate>2022</risdate><abstract>A micro-light emitting diode (micro-LED) includes a mesa structure that includes an n-type semiconductor layer, a p-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. The active region includes at least one quantum well layer. The at least one quantum well layer has a first effective bandgap and a first stress in a center region of the at least one quantum well layer, and a second effective bandgap and a second stress in a mesa sidewall region of the at least one quantum well layer. The second stress is lower than the first stress or is opposite to the first stress. The second effective bandgap is greater than the first effective bandgap to form a lateral carrier barrier in the at least one quantum well layer.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2022231192A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title CURRENT APERTURE IN MICRO-LED THROUGH STRESS RELAXATION
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-15T22%3A21%3A22IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=GRUNDMANN,%20Michael&rft.date=2022-07-21&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2022231192A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true