CURRENT APERTURE IN MICRO-LED THROUGH STRESS RELAXATION

A micro-light emitting diode (micro-LED) includes a mesa structure that includes an n-type semiconductor layer, a p-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. The active region includes at least one quantum well layer. Th...

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Bibliographische Detailangaben
Hauptverfasser:	GRUNDMANN, Michael, HURNI, Christophe Antoine, TYAGI, Anurag
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A micro-light emitting diode (micro-LED) includes a mesa structure that includes an n-type semiconductor layer, a p-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. The active region includes at least one quantum well layer. The at least one quantum well layer has a first effective bandgap and a first stress in a center region of the at least one quantum well layer, and a second effective bandgap and a second stress in a mesa sidewall region of the at least one quantum well layer. The second stress is lower than the first stress or is opposite to the first stress. The second effective bandgap is greater than the first effective bandgap to form a lateral carrier barrier in the at least one quantum well layer.