TUNGSTEN STRUCTURES AND METHODS OF FORMING THE STRUCTURES

Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then s...

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Bibliographische Detailangaben
Hauptverfasser: McTeer, Everett Allen, Emor, Christian George, Rampton, Travis, Greenlee, Jordan D, Klein, Rita J
Format: Patent
Sprache:eng
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Zusammenfassung:Described are methods for forming a tungsten conductive structure over a substrate, such as a semiconductor substrate. Described examples include forming a silicon-containing material, such as a doped silicon-containing material, over a supporting structure. The silicon-containing material is then subsequently converted to a tungsten seed material containing the dopant material. A tungsten fill material of lower resistance will then be formed over the tungsten seed material.