Low-k Feature Formation Processes and Structures Formed Thereby

Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. S...

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Bibliographische Detailangaben
Hauptverfasser: Cheng, Te-En, Kao, Wan-Yi, Tu, Guan-Yao, Te, Li Chun, Lin, Hsiang-Wei, Ko, Chung-Chi, Lin, Wei-Ken, Liao, Shu Ling
Format: Patent
Sprache:eng
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Zusammenfassung:Semiconductor device structures having low-k features and methods of forming low-k features are described herein. Some examples relate to a surface modification layer, which may protect a low-k feature during subsequent processing. Some examples relate to gate spacers that include a low-k feature. Some examples relate to a low-k contact etch stop layer. Example methods are described for forming such features.