DEPOSITION OF ALPHA-GALLIUM OXIDE THIN FILMS

DEPOSITION OF ALPHA-GALLIUM OXIDE THIN FILMS

A method for forming alpha-gallium oxide (α-Ga2O3) on GaN-compatible substrates uses an epitaxial deposition process comprising (a) forming about one monolayer of wurtzite gallium nitride (w-GaN) on the substrate; (b) reacting the said monolayer of w-GaN with an oxygen precursor to form about one mo...

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Bibliographische Detailangaben
1. Verfasser: RAFIE BORUJENY, Elham
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
CRYSTAL GROWTH
DIFFUSION TREATMENT OF METALLIC MATERIAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A method for forming alpha-gallium oxide (α-Ga2O3) on GaN-compatible substrates uses an epitaxial deposition process comprising (a) forming about one monolayer of wurtzite gallium nitride (w-GaN) on the substrate; (b) reacting the said monolayer of w-GaN with an oxygen precursor to form about one monolayer of α-Ga2O3 on the substrate; (c) repeating steps (a) and (b) to form one or more additional monolayers of α-Ga2O3 on the substrate.