MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chu, Feng-Ching, Yang, Feng-Cheng, Chiang, Katherine H, Lin, Chung-Te, Chen, Chieh-Fang
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:The present disclosure provides a semiconductor structure and a method for forming a semiconductor structure. The semiconductor structure includes a substrate, and a dielectric stack over the substrate. The dielectric stack includes a first layer over the substrate and a second layer over the first layer. The semiconductor structure further includes a gate layer including a first portion traversing the second layer and a second portion extending between the first layer and the second layer.