GOLD THROUGH SILICON MASK PLATING

Systems and methods are provided for method for etch assisted gold (Au) through silicon mask plating (EAG-TSM). An example method comprises providing a seed layer on a substrate and providing a silicon mask on at least a portion of the seed layer on the substrate. The silicon mask includes one or mo...

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Bibliographische Detailangaben
Hauptverfasser:	Buckalew, Bryan L, Chua, Lee Peng, Blickensderfer, Jacob Kurtis, Ponnuswamy, Thomas A, Liang, Defu, Mayer, Steven T
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Systems and methods are provided for method for etch assisted gold (Au) through silicon mask plating (EAG-TSM). An example method comprises providing a seed layer on a substrate and providing a silicon mask on at least a portion of the seed layer on the substrate. The silicon mask includes one or more via to be filled with Au. The masked substrate is subjected to at least one processing cycle, each processing cycle including an Au plating sub-step and an etch treatment sub-step. The cycles are repeated until a selected via fill thickness is achieved.