LOW-VOLTAGE OPERATION DUAL-GATE ORGANIC THIN-FILM TRANSISTORS AND METHODS OF MANUFACTURING THEREOF

LOW-VOLTAGE OPERATION DUAL-GATE ORGANIC THIN-FILM TRANSISTORS AND METHODS OF MANUFACTURING THEREOF

A thin-film transistor (TFT), includes: a substrate (202); an organic semiconductor (OSC) layer (210) positioned on the substrate; a dielectric layer (214) positioned on the OSC layer; and a polymeric interlayer (212) disposed in-between the OSC layer and the dielectric layer, such that the dielectr...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Jang, Jin, Manley, Robert George, Mehrotra, Karan, He, Mingqian, Li, Xiuling, Zhelev, Nikolay Zhelev
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:A thin-film transistor (TFT), includes: a substrate (202); an organic semiconductor (OSC) layer (210) positioned on the substrate; a dielectric layer (214) positioned on the OSC layer; and a polymeric interlayer (212) disposed in-between the OSC layer and the dielectric layer, such that the dielectric layer is configured to exhibit a double layer capacitance effect. A method of forming a thin-film transistor, includes: providing a substrate; providing a bottom gate layer atop the substrate; disposing consecutively from the substrate, an organic semiconductor (OSC) layer, a dielectric layer, and a top gate layer; and patterning the OSC layer, the dielectric layer, and the top gate layer using a single mask.