Polycrystalline Silicon Material

A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of...

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Bibliographische Detailangaben
Hauptverfasser: Emoto, Miki, Asano, Takuya, Saiki, Kouichi, Onoda, Tooru
Format: Patent
Sprache:eng
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Zusammenfassung:A polycrystalline silicon material for producing silicon single crystal, containing a plurality of polycrystalline silicon chunks, in which assuming that a total concentration of donor elements present inside a bulk body of the polycrystalline silicon material is Cd1 [ppta], a total concentration of acceptor elements present inside the bulk body of the polycrystalline silicon material is Ca1 [ppta], a total concentration of the donor elements present on a surface of the polycrystalline silicon material is Cd2 [ppta], and a total concentration of the acceptor elements present on the surface of the polycrystalline silicon material is Ca2 [ppta], Cd1, Ca1, Cd2, and Ca2 satisfy a relation of 2 [ppta]≤(Cd1+Cd2)−(Ca1+Ca2)≤8 [ppta].