SEMICONDUCTOR DEVICE HAVING A SILICON CARBIDE DRIFT ZONE OVER A SILICON CARBIDE FIELD STOP ZONE

SEMICONDUCTOR DEVICE HAVING A SILICON CARBIDE DRIFT ZONE OVER A SILICON CARBIDE FIELD STOP ZONE

A semiconductor device includes a silicon carbide (SiC) drift zone over a SiC field stop zone and/or a SiC semiconductor substrate. A concentration of Z1/2 defects in the SiC drift zone is at least one order of magnitude smaller than in the SiC field stop zone and/or the SiC semiconductor substrate....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Strack, Helmut, Stegner, Andre Rainer, Konrath, Jens Peter, Schulze, Hans-Joachim
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a silicon carbide (SiC) drift zone over a SiC field stop zone and/or a SiC semiconductor substrate. A concentration of Z1/2 defects in the SiC drift zone is at least one order of magnitude smaller than in the SiC field stop zone and/or the SiC semiconductor substrate. Separately or in combination, a concentration of Z1/2 defects in a part of the SiC drift zone is at least one order of magnitude smaller than in another part of the drift zone.