FERROELECTRIC SEMICONDUCTING FLOATING GATE FIELD-EFFECT TRANSISTOR

FERROELECTRIC SEMICONDUCTING FLOATING GATE FIELD-EFFECT TRANSISTOR

Non-volatile memory devices utilizing polarizable ferroelectric-semiconductor materials as the floating gate in floating-gate field-effect metal oxide transistors are described. Such materials can be annealed at temperatures less than 450° C., and fields below about 250 kV/cm can be used for changin...

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Bibliographische Detailangaben
Hauptverfasser: Nobles, Jason E, McWilliams, Christopher R, Celinska, Jolanta B, Paz de Araujo, Carlos A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Non-volatile memory devices utilizing polarizable ferroelectric-semiconductor materials as the floating gate in floating-gate field-effect metal oxide transistors are described. Such materials can be annealed at temperatures less than 450° C., and fields below about 250 kV/cm can be used for changing polarization of the ferroelectric semiconductor materials, leading to devices capable of high endurance (>1010 cycles).