HIGH TEMPERATURE HEATING OF A SUBSTRATE IN A PROCESSING CHAMBER

A processing chamber includes: a lower portion; an upper portion that covers the lower portion; a pedestal that is located within the lower portion, to vertically support a substrate above a top surface of the pedestal to distribute a precursor between the top surface and a first surface of the subs...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LEE, James F, SHAIKH, Fayaz A, SLEVIN, Damien Martin, MUDROW, Matthew, CONNER, Rand Arthur
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:A processing chamber includes: a lower portion; an upper portion that covers the lower portion; a pedestal that is located within the lower portion, to vertically support a substrate above a top surface of the pedestal to distribute a precursor between the top surface and a first surface of the substrate, the pedestal configured to be electrically connected to one of a ground potential and a radio frequency potential; a grid that is coupled to the upper portion and that is configured to be electrically connected to the other one of the ground potential and the radio frequency potential; a window that covers an opening in the upper portion; and an infrared light source configured to transmit infrared light through the window and the grid to a second surface of the substrate. The second surface of the substrate is opposite the first surface of the substrate.