ELECTROSTATIC CHUCK WITH SPATIALLY TUNABLE RF COUPLING TO A WAFER
A substrate support assembly to support a semiconductor substrate in a processing chamber includes a baseplate arranged in the processing chamber, a dielectric layer arranged on the baseplate to support the semiconductor substrate, an electrode disposed in the dielectric layer along a horizontal pla...
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| creator | DREWERY, John |
| description | A substrate support assembly to support a semiconductor substrate in a processing chamber includes a baseplate arranged in the processing chamber, a dielectric layer arranged on the baseplate to support the semiconductor substrate, an electrode disposed in the dielectric layer along a horizontal plane, and a plurality of channels to carry a fluid. The plurality of channels are disposed in the dielectric layer along the horizontal plane on a side of the electrode facing away from the baseplate. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022199378A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022199378A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022199378A13</originalsourceid><addsrcrecordid>eNrjZHB09XF1DgnyDw5xDPF0VnD2CHX2Vgj3DPFQCA4Aijj6-EQqhIT6OTr5uCoEuSk4-4cG-Hj6uSuE-Cs4KoQ7urkG8TCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwMjI0NLS2NzC0dDY-JUAQCGXyvi</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ELECTROSTATIC CHUCK WITH SPATIALLY TUNABLE RF COUPLING TO A WAFER</title><source>esp@cenet</source><creator>DREWERY, John</creator><creatorcontrib>DREWERY, John</creatorcontrib><description>A substrate support assembly to support a semiconductor substrate in a processing chamber includes a baseplate arranged in the processing chamber, a dielectric layer arranged on the baseplate to support the semiconductor substrate, an electrode disposed in the dielectric layer along a horizontal plane, and a plurality of channels to carry a fluid. The plurality of channels are disposed in the dielectric layer along the horizontal plane on a side of the electrode facing away from the baseplate.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220623&DB=EPODOC&CC=US&NR=2022199378A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220623&DB=EPODOC&CC=US&NR=2022199378A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>DREWERY, John</creatorcontrib><title>ELECTROSTATIC CHUCK WITH SPATIALLY TUNABLE RF COUPLING TO A WAFER</title><description>A substrate support assembly to support a semiconductor substrate in a processing chamber includes a baseplate arranged in the processing chamber, a dielectric layer arranged on the baseplate to support the semiconductor substrate, an electrode disposed in the dielectric layer along a horizontal plane, and a plurality of channels to carry a fluid. The plurality of channels are disposed in the dielectric layer along the horizontal plane on a side of the electrode facing away from the baseplate.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHB09XF1DgnyDw5xDPF0VnD2CHX2Vgj3DPFQCA4Aijj6-EQqhIT6OTr5uCoEuSk4-4cG-Hj6uSuE-Cs4KoQ7urkG8TCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwMjI0NLS2NzC0dDY-JUAQCGXyvi</recordid><startdate>20220623</startdate><enddate>20220623</enddate><creator>DREWERY, John</creator><scope>EVB</scope></search><sort><creationdate>20220623</creationdate><title>ELECTROSTATIC CHUCK WITH SPATIALLY TUNABLE RF COUPLING TO A WAFER</title><author>DREWERY, John</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022199378A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>DREWERY, John</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>DREWERY, John</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ELECTROSTATIC CHUCK WITH SPATIALLY TUNABLE RF COUPLING TO A WAFER</title><date>2022-06-23</date><risdate>2022</risdate><abstract>A substrate support assembly to support a semiconductor substrate in a processing chamber includes a baseplate arranged in the processing chamber, a dielectric layer arranged on the baseplate to support the semiconductor substrate, an electrode disposed in the dielectric layer along a horizontal plane, and a plurality of channels to carry a fluid. The plurality of channels are disposed in the dielectric layer along the horizontal plane on a side of the electrode facing away from the baseplate.</abstract><oa>free_for_read</oa></addata></record> |
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| recordid | cdi_epo_espacenet_US2022199378A1 |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | ELECTROSTATIC CHUCK WITH SPATIALLY TUNABLE RF COUPLING TO A WAFER |
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