IMPROVED HIGH-TEMPERATURE CHIP

One aspect relates to a high-temperature sensor, having a coated substrate. The substrate contains a zirconium oxide or a zirconium oxide ceramic, at least one resistance structure and at least two connection contacts. The connection contacts electrically contact the resistance structure. The substr...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: ZINKEVICH, Matsvei, ASMUS, Tim, DIETMANN, Stefan
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:One aspect relates to a high-temperature sensor, having a coated substrate. The substrate contains a zirconium oxide or a zirconium oxide ceramic, at least one resistance structure and at least two connection contacts. The connection contacts electrically contact the resistance structure. The substrate is coated with an insulation layer. The insulation layer contains a metal oxide layer, the resistance structure and the free regions of the insulation layer, on which no resistance structure is arranged, are coated at least in regions with a ceramic intermediate layer, and a protective layer and/or a cover is arranged on the ceramic intermediate layer. At least one opening is formed in the insulation layer, which exposes at least sections of a surface of the substrate.