MONOLITHIC POST COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR INTEGRATION OF THERMOELECTRIC-BASED INFRARED DETECTOR

MONOLITHIC POST COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR INTEGRATION OF THERMOELECTRIC-BASED INFRARED DETECTOR

A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device monolithically after CMOS proce...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Kropelnicki, Piotr, Ocak, Ilker Ender, Ang, Wan Chia
Format: Patent
Sprache:eng
Schlagworte:
COLORIMETRY
MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT
MEASURING
MICROSTRUCTURAL TECHNOLOGY
PERFORMING OPERATIONS
PHYSICS
PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
RADIATION PYROMETRY
TESTING
TRANSPORTING
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Beschreibung
Zusammenfassung:A complementary metal oxide semiconductor (CMOS) device embedded with micro-electro-mechanical system (MEMS) components in a MEMS region is disclosed. The MEMS components, for example, are infrared (IR) thermosensors. The MEMS sensors are integrated on the CMOS device monolithically after CMOS processing. For example, the MEMS sensors are formed over a BEOL dielectric of a CMOS device. The device is encapsulated with a CMOS compatible IR transparent cap to hermetically seal the MEMS sensors in the MEMS region.