WIDE BANDGAP SEMICONDUCTOR DEVICE WITH A SELF-ALIGNED CHANNEL AND INTEGRATION SCHEMES

A semiconductor device is provided. The semiconductor device comprises a substrate having a wide bandgap semiconductor material and an epitaxial layer arranged over a first surface of the substrate. A source region having a first conductivity type may be arranged in the epitaxial layer. A well region having a second conductivity type may be laterally adjacent to the source region. The first conductivity type may be different from the second conductivity type. A gate dielectric layer may be arranged over the well region. A field dielectric layer may be arranged over the epitaxial layer adjacent to the well region.