QUANTUM DOT POROUS SILICON MEMBRANE-BASED RADIATION DETECTOR

A detection layer (416) for a radiation detector (400) includes a porous silicon membrane (418). The porous silicon membrane includes silicon (419) with a first side (430) and a second opposing side (432), a plurality of pores (420) extending entirely through the silicon from the first side to the s...

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Bibliographische Detailangaben
Hauptverfasser:	CHAPPO, MARC ANTHONY, BROCK, STEPHANIE LEE
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASUREMENT OF NUCLEAR OR X-RADIATION MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING
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Beschreibung
Zusammenfassung:	A detection layer (416) for a radiation detector (400) includes a porous silicon membrane (418). The porous silicon membrane includes silicon (419) with a first side (430) and a second opposing side (432), a plurality of pores (420) extending entirely through the silicon from the first side to the second opposing side, each including shared walls (426), at least one protrusion of silicon (424) protruding out and extending from the first side a distance (504, 604, 704). The porous silicon membrane further includes a plurality of radiation sensitive quantum dots (422) in the pores and a quantum dot layer disposed on the first side and having a surface (434) and a thickness (506, 606, 706), wherein the thickness is greater than the distance.