SEMICONDUCTOR DEVICE STRUCTURES WITH A SUBSTRATE BIASING SCHEME

Semiconductor device structures with substrate biasing, methods of forming a semiconductor device structure with substrate biasing, and methods of operating a semiconductor device structure with substrate biasing. A substrate contact is coupled to a portion of a bulk semiconductor substrate in a dev...

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Bibliographische Detailangaben
Hauptverfasser: Joseph, Alvin J, Wolf, Randy, Stamper, Anthony K, Ellis-Monaghan, John J, Vallett, Aaron, Abou-Khalil, Michel J
Format: Patent
Sprache:eng
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Zusammenfassung:Semiconductor device structures with substrate biasing, methods of forming a semiconductor device structure with substrate biasing, and methods of operating a semiconductor device structure with substrate biasing. A substrate contact is coupled to a portion of a bulk semiconductor substrate in a device region. The substrate contact is configured to be biased with a negative bias voltage. A field-effect transistor includes a semiconductor body in the device region of the bulk semiconductor substrate. The semiconductor body is electrically isolated from the portion of the bulk semiconductor substrate.