SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device with less variation in transistor characteristics is provided. The semiconductor device includes a transistor, a first and a second conductor, and a first to a third insulator. The transistor and the first conductor are provided over the first insulator. The transistor include...

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Bibliographische Detailangaben
Hauptverfasser:	NEI, Kosei, MATSUZAKI, Takanori
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device with less variation in transistor characteristics is provided. The semiconductor device includes a transistor, a first and a second conductor, and a first to a third insulator. The transistor and the first conductor are provided over the first insulator. The transistor includes an oxide semiconductor. The second insulator is provided over the transistor. The first conductor includes a region which does not overlap with the second insulator. The third insulator is provided to cover the first conductor, the transistor, and the second insulator. The second conductor is provided over the third insulator and at least partly overlaps with the first conductor.