NON VOLATILE RESISTIVE MEMORY LOGIC DEVICE

NON VOLATILE RESISTIVE MEMORY LOGIC DEVICE

A resistance switching RAM logic device is presented. The device includes a pair of resistance switching RAM cells that may be independently programed into at least a low resistance state (LRS) or a high resistance state (HRS). The resistance switching RAM logic device may further include a shared o...

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Bibliographische Detailangaben
Hauptverfasser: LIE, FEE LI, Silvestre, Mary Claire, Chen, Hsueh-Chung, Seo, Soon-Cheon, Standaert, Theodorus E, Yang, Chih-Chao, Mignot, Yann, LIU, Chi-Chun
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
INFORMATION STORAGE
PHYSICS
PULSE TECHNIQUE
STATIC STORES
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Beschreibung
Zusammenfassung:A resistance switching RAM logic device is presented. The device includes a pair of resistance switching RAM cells that may be independently programed into at least a low resistance state (LRS) or a high resistance state (HRS). The resistance switching RAM logic device may further include a shared output node electrically connected to the pair of resistance switching RAM cells. A logical output may be determined from the programmed resistance state of each of the resistance switching RAM cells.