IrAl AS A NON-MAGNETIC SPACER LAYER FOR FORMATION OF SYNTHETIC ANTI-FERROMAGNETS (SAF) WITH HEUSLER COMPOUNDS

IrAl AS A NON-MAGNETIC SPACER LAYER FOR FORMATION OF SYNTHETIC ANTI-FERROMAGNETS (SAF) WITH HEUSLER COMPOUNDS

A device including a first magnetic layer, a templating structure and a second magnetic layer is described. The templating structure is on the first magnetic layer. The second magnetic layer is on the templating structure. The templating structure includes D and E. A ratio of D to E is represented b...

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Bibliographische Detailangaben
Hauptverfasser: Garg, Chirag, Parkin, Stuart Stephen Papworth, Jeong, Jaewoo, Ferrante, Yari, Filippou, Panagiotis Charilaos, Samant, Mahesh
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Zusammenfassung:A device including a first magnetic layer, a templating structure and a second magnetic layer is described. The templating structure is on the first magnetic layer. The second magnetic layer is on the templating structure. The templating structure includes D and E. A ratio of D to E is represented by D1-xEx, with x being at least 0.4 and not more than 0.6. E includes a main constituent. The main constituent includes at least one of Al, Ga, and Ge. E includes at least fifty atomic percent of the main constituent. D includes at least one constituent that includes Ir. D includes at least 50 atomic percent of the at least one constituent. The templating structure is nonmagnetic at room temperature. At least one of the first magnetic layer and the second magnetic layer includes at least one of a Heusler compound and an L10 compound.