PIXEL WITH BURIED OPTICAL ISOLATION

PIXEL WITH BURIED OPTICAL ISOLATION

The invention provides an image sensor comprising a light receiving side (Fa) and, in a substrate (100), a photoelectric conversion region (PD) capable of converting light received from the light receiving side (Fa) into a charge, a storage region (SN) capable of storing a charge transferred from th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: GIROUD-GARAMPON, Cédric, ABADIE, Quentin, CAZAUX, Yvon, AYEL, François
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The invention provides an image sensor comprising a light receiving side (Fa) and, in a substrate (100), a photoelectric conversion region (PD) capable of converting light received from the light receiving side (Fa) into a charge, a storage region (SN) capable of storing a charge transferred from the photoelectric conversion region and an optical isolation element of the storage region. The optical isolation element (60) is buried in the substrate between the light receiving side and the storage region.