SELECTIVE PATTERNING OF VIAS WITH HARDMASKS

SELECTIVE PATTERNING OF VIAS WITH HARDMASKS

Methods and structures for forming vias are provided. The method includes forming a structure that includes an odd line hardmask and an even line hardmask. The odd line hardmask and the even line hardmask include different hardmask materials that have different etch selectivity with respect to each...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Arnold, John C, Dutta, Ashim, Philip, Timothy M, Mukesh, Sagarika, Metzler, Dominik
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods and structures for forming vias are provided. The method includes forming a structure that includes an odd line hardmask and an even line hardmask. The odd line hardmask and the even line hardmask include different hardmask materials that have different etch selectivity with respect to each other. The method includes patterning vias separately into the odd line hardmask and the even line hardmask based on the different etch selectivity of the different hardmask materials. The method also includes forming via plugs at the vias. The method includes cutting even line cuts and odd line cuts into the structure. The even line cuts and the odd line cuts are self-aligned with the vias. The vias are formed at line ends of the structure.