MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE

There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a peripheral circuit disposed on a substrate; and a gate stack structure overlapping with the peripheral circuit. The gate stack structure includes a plurality of first cell plugs having s...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	JANG, Jung Shik, LEE, Dong Hun
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
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