MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE

MEMORY DEVICE AND MANUFACTURING METHOD OF THE MEMORY DEVICE

There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a peripheral circuit disposed on a substrate; and a gate stack structure overlapping with the peripheral circuit. The gate stack structure includes a plurality of first cell plugs having s...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JANG, Jung Shik, LEE, Dong Hun
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:There are provided a memory device and a manufacturing method of the memory device. The memory device includes: a peripheral circuit disposed on a substrate; and a gate stack structure overlapping with the peripheral circuit. The gate stack structure includes a plurality of first cell plugs having substantially a cylindrical structure and a plurality of second cell plugs having substantially a hexagonal prism structure.