ISOLATION WITH MULTI-STEP STRUCTURE

A semiconductor device structure is provided. The semiconductor device structure includes a first fin structure and an adjacent second fin structure protruding from the semiconductor substrate and an isolation structure formed in the semiconductor substrate and in direct contact with the first fin s...

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Bibliographische Detailangaben
Hauptverfasser:	CHEN, Chun-Hung, HSIEH, Chih-Hung, LIN, Ta-Chun, TAI, Kuang-Cheng, LIAW, Jhon-Jhy, CHUANG, Tien-Shao, PAN, Kuo-Hua
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device structure is provided. The semiconductor device structure includes a first fin structure and an adjacent second fin structure protruding from the semiconductor substrate and an isolation structure formed in the semiconductor substrate and in direct contact with the first fin structure and the second fin structure. The first fin structure and the second fin structure each include a first portion protruding above a top surface of the isolation structure, a second portion in direct contact with a bottom surface of the first portion, and a third portion extending from a bottom of the second portion. A top width of the third portion is different than a bottom width of the third portion and a bottom width of the second portion.