METHODS FOR FORMING A SINGLE CRYSTAL SILICON INGOT WITH REDUCED CRUCIBLE EROSION

METHODS FOR FORMING A SINGLE CRYSTAL SILICON INGOT WITH REDUCED CRUCIBLE EROSION

Methods for forming a single crystal silicon ingot with reduced crucible erosion are disclosed. Solid-phase quartz is added to the melt to reduce erosion at the crucible-melt surface interface. The quartz may be synthetic quartz such as synthetic quartz rods. The quartz may be disposed near the cruc...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Phillips, Richard Joseph, Zepeda, Salvador
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:Methods for forming a single crystal silicon ingot with reduced crucible erosion are disclosed. Solid-phase quartz is added to the melt to reduce erosion at the crucible-melt surface interface. The quartz may be synthetic quartz such as synthetic quartz rods. The quartz may be disposed near the crucible-melt surface interface. Quartz dissolves and suppresses the amount of quartz that dissolves from the crucible at the crucible-melt surface interface.