TRANSISTOR PACKAGES WITH IMPROVED DIE ATTACH

TRANSISTOR PACKAGES WITH IMPROVED DIE ATTACH

A transistor device structure may include a submount, a transistor device on the carrier submount, and a metal bonding layer between the submount and the transistor die, the metal bonding stack providing mechanical attachment of the transistor die to the submount. The metal bonding stack may include...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Pun, Arthur
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A transistor device structure may include a submount, a transistor device on the carrier submount, and a metal bonding layer between the submount and the transistor die, the metal bonding stack providing mechanical attachment of the transistor die to the submount. The metal bonding stack may include gold, tin and nickel. A weight percentage of a combination of nickel and tin in the metal bonding layer is greater than 50 percent and a weight percentage of gold in the metal bonding layer is less than 25 percent.