MULTI-STATION SEMICONDUCTOR PROCESSING WITH INDEPENDENTLY ADJUSTABLE PEDESTALS

Methods and apparatuses for depositing material onto substrates in a multi-station deposition apparatus having a first station and a second station are provided. One method may include providing a first substrate onto a first pedestal of the first station, providing a second substrate onto a second...

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Bibliographische Detailangaben
Hauptverfasser:	Baskar, Dinesh, Pasquale, Frank Loren, Petraglia, Jennifer Leigh, LaVoie, Adrien
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Methods and apparatuses for depositing material onto substrates in a multi-station deposition apparatus having a first station and a second station are provided. One method may include providing a first substrate onto a first pedestal of the first station, providing a second substrate onto a second pedestal of the second station, and for a first part of a deposition process, simultaneously generating a first plasma at the first station while the first pedestal is separated by a first distance from a first showerhead of the first station, thereby depositing a first layer of material onto the first substrate, and a second plasma at the second station while the second pedestal is separated by a second distance from a second showerhead of the second station, thereby depositing a second layer of material onto the second substrate, in which the first distance is different than the second distance.