DRY ETCHING GAS COMPOSITION COMPRISING SULFUR-CONTAINING FLUOROCARBON COMPOUND AND DRY ETCHING METHOD USING THE SAME

DRY ETCHING GAS COMPOSITION COMPRISING SULFUR-CONTAINING FLUOROCARBON COMPOUND AND DRY ETCHING METHOD USING THE SAME

Provided is a novel etching gas composition that comprises a sulfur-containing compound and that can selectively etch SiO2 over low dielectric constant materials (low-k materials; SiON, SiCN, SiOCN, SiOC),A dry etching gas composition comprises a saturated and cyclic sulfur-containing fluorocarbon c...

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Bibliographische Detailangaben
Hauptverfasser: SHIMIZU, Hisashi, KATO, Korehito
Format: Patent
Sprache:eng
Schlagworte:
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BASIC ELECTRIC ELEMENTS
CHEMISTRY
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Zusammenfassung:Provided is a novel etching gas composition that comprises a sulfur-containing compound and that can selectively etch SiO2 over low dielectric constant materials (low-k materials; SiON, SiCN, SiOCN, SiOC),A dry etching gas composition comprises a saturated and cyclic sulfur-containing fluorocarbon compound that is represented by general formula (1) of CxFySz where x, y, and z are 2≤x≤5, y≤2x, an