SEMICONDUCTOR STRUCTURE FORMATION METHOD AND SEMICONDUCTOR STRUCTURE

Embodiments of the present application provide a semiconductor structure formation method and a semiconductor structure. The semiconductor structure formation method includes: providing a substrate, the substrate including a contact region and a virtual region arranged adjacent to each other, a bitline structure and a dielectric layer arranged discretely being formed on the substrate, an extension direction of the dielectric layer intersecting with that of the bitline structure, and the bitline structure and the dielectric layer defining discrete capacitor contact openings; forming a sacrificial layer filling the capacitor contact opening; removing, in the contact region, the sacrificial layer to form a second opening; forming a bottom conductive layer filling the second opening; removing, in the virtual region, some height of the sacrificial layer to form a first opening; forming an insulation layer filling the first opening; and forming a capacitor contact structure located in the second opening.