GAS SENSOR AND MANUFACTURING METHOD THEREOF
Provided is a gas sensor including a substrate, a first membrane disposed on the substrate, a heating structure disposed on the first membrane, a second membrane disposed on the heating structure, a sensing electrode disposed on the second membrane, and a sensing material structure disposed on the s...
Gespeichert in:
| Hauptverfasser: | , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | JUNG, Jong Jin LEE, Jaewoo MOON, Seungeon YOO, Do Joon KIM, Jeong Hun IM, Jong Pil |
| description | Provided is a gas sensor including a substrate, a first membrane disposed on the substrate, a heating structure disposed on the first membrane, a second membrane disposed on the heating structure, a sensing electrode disposed on the second membrane, and a sensing material structure disposed on the sensing electrode. Here, the substrate provides an isolation space defined by a recessed surface obtained as a portion of a top surface of the substrate is spaced downward from a bottom surface of the first membrane, and the first membrane provides a first membrane etching hole that vertically extends to connect a top surface and the bottom surface of the first membrane and is connected with the isolation space. Also, the first membrane etching hole has a diameter of about 3 μm to about 20 μm. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022128498A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022128498A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022128498A13</originalsourceid><addsrcrecordid>eNrjZNB2dwxWCHb1C_YPUnD0c1HwdfQLdXN0DgkN8vRzV_B1DfHwd1EI8XANcvV342FgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGRoZGFiaWFo6GxsSpAgADNCXc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GAS SENSOR AND MANUFACTURING METHOD THEREOF</title><source>esp@cenet</source><creator>JUNG, Jong Jin ; LEE, Jaewoo ; MOON, Seungeon ; YOO, Do Joon ; KIM, Jeong Hun ; IM, Jong Pil</creator><creatorcontrib>JUNG, Jong Jin ; LEE, Jaewoo ; MOON, Seungeon ; YOO, Do Joon ; KIM, Jeong Hun ; IM, Jong Pil</creatorcontrib><description>Provided is a gas sensor including a substrate, a first membrane disposed on the substrate, a heating structure disposed on the first membrane, a second membrane disposed on the heating structure, a sensing electrode disposed on the second membrane, and a sensing material structure disposed on the sensing electrode. Here, the substrate provides an isolation space defined by a recessed surface obtained as a portion of a top surface of the substrate is spaced downward from a bottom surface of the first membrane, and the first membrane provides a first membrane etching hole that vertically extends to connect a top surface and the bottom surface of the first membrane and is connected with the isolation space. Also, the first membrane etching hole has a diameter of about 3 μm to about 20 μm.</description><language>eng</language><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES ; MICROSTRUCTURAL TECHNOLOGY ; PERFORMING OPERATIONS ; PHYSICS ; PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS ; TESTING ; TRANSPORTING</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220428&DB=EPODOC&CC=US&NR=2022128498A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20220428&DB=EPODOC&CC=US&NR=2022128498A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JUNG, Jong Jin</creatorcontrib><creatorcontrib>LEE, Jaewoo</creatorcontrib><creatorcontrib>MOON, Seungeon</creatorcontrib><creatorcontrib>YOO, Do Joon</creatorcontrib><creatorcontrib>KIM, Jeong Hun</creatorcontrib><creatorcontrib>IM, Jong Pil</creatorcontrib><title>GAS SENSOR AND MANUFACTURING METHOD THEREOF</title><description>Provided is a gas sensor including a substrate, a first membrane disposed on the substrate, a heating structure disposed on the first membrane, a second membrane disposed on the heating structure, a sensing electrode disposed on the second membrane, and a sensing material structure disposed on the sensing electrode. Here, the substrate provides an isolation space defined by a recessed surface obtained as a portion of a top surface of the substrate is spaced downward from a bottom surface of the first membrane, and the first membrane provides a first membrane etching hole that vertically extends to connect a top surface and the bottom surface of the first membrane and is connected with the isolation space. Also, the first membrane etching hole has a diameter of about 3 μm to about 20 μm.</description><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</subject><subject>MICROSTRUCTURAL TECHNOLOGY</subject><subject>PERFORMING OPERATIONS</subject><subject>PHYSICS</subject><subject>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</subject><subject>TESTING</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB2dwxWCHb1C_YPUnD0c1HwdfQLdXN0DgkN8vRzV_B1DfHwd1EI8XANcvV342FgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGRoZGFiaWFo6GxsSpAgADNCXc</recordid><startdate>20220428</startdate><enddate>20220428</enddate><creator>JUNG, Jong Jin</creator><creator>LEE, Jaewoo</creator><creator>MOON, Seungeon</creator><creator>YOO, Do Joon</creator><creator>KIM, Jeong Hun</creator><creator>IM, Jong Pil</creator><scope>EVB</scope></search><sort><creationdate>20220428</creationdate><title>GAS SENSOR AND MANUFACTURING METHOD THEREOF</title><author>JUNG, Jong Jin ; LEE, Jaewoo ; MOON, Seungeon ; YOO, Do Joon ; KIM, Jeong Hun ; IM, Jong Pil</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022128498A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES</topic><topic>MICROSTRUCTURAL TECHNOLOGY</topic><topic>PERFORMING OPERATIONS</topic><topic>PHYSICS</topic><topic>PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS</topic><topic>TESTING</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>JUNG, Jong Jin</creatorcontrib><creatorcontrib>LEE, Jaewoo</creatorcontrib><creatorcontrib>MOON, Seungeon</creatorcontrib><creatorcontrib>YOO, Do Joon</creatorcontrib><creatorcontrib>KIM, Jeong Hun</creatorcontrib><creatorcontrib>IM, Jong Pil</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JUNG, Jong Jin</au><au>LEE, Jaewoo</au><au>MOON, Seungeon</au><au>YOO, Do Joon</au><au>KIM, Jeong Hun</au><au>IM, Jong Pil</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GAS SENSOR AND MANUFACTURING METHOD THEREOF</title><date>2022-04-28</date><risdate>2022</risdate><abstract>Provided is a gas sensor including a substrate, a first membrane disposed on the substrate, a heating structure disposed on the first membrane, a second membrane disposed on the heating structure, a sensing electrode disposed on the second membrane, and a sensing material structure disposed on the sensing electrode. Here, the substrate provides an isolation space defined by a recessed surface obtained as a portion of a top surface of the substrate is spaced downward from a bottom surface of the first membrane, and the first membrane provides a first membrane etching hole that vertically extends to connect a top surface and the bottom surface of the first membrane and is connected with the isolation space. Also, the first membrane etching hole has a diameter of about 3 μm to about 20 μm.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2022128498A1 |
| source | esp@cenet |
| subjects | INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS TESTING TRANSPORTING |
| title | GAS SENSOR AND MANUFACTURING METHOD THEREOF |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-26T14%3A03%3A30IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JUNG,%20Jong%20Jin&rft.date=2022-04-28&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2022128498A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |