GAS SENSOR AND MANUFACTURING METHOD THEREOF

Provided is a gas sensor including a substrate, a first membrane disposed on the substrate, a heating structure disposed on the first membrane, a second membrane disposed on the heating structure, a sensing electrode disposed on the second membrane, and a sensing material structure disposed on the s...

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Bibliographische Detailangaben
Hauptverfasser:	JUNG, Jong Jin, LEE, Jaewoo, MOON, Seungeon, YOO, Do Joon, KIM, Jeong Hun, IM, Jong Pil
Format:	Patent
Sprache:	eng
Schlagworte:	INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICALDEVICES MICROSTRUCTURAL TECHNOLOGY PERFORMING OPERATIONS PHYSICS PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTUREOR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS TESTING TRANSPORTING
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Beschreibung
Zusammenfassung:	Provided is a gas sensor including a substrate, a first membrane disposed on the substrate, a heating structure disposed on the first membrane, a second membrane disposed on the heating structure, a sensing electrode disposed on the second membrane, and a sensing material structure disposed on the sensing electrode. Here, the substrate provides an isolation space defined by a recessed surface obtained as a portion of a top surface of the substrate is spaced downward from a bottom surface of the first membrane, and the first membrane provides a first membrane etching hole that vertically extends to connect a top surface and the bottom surface of the first membrane and is connected with the isolation space. Also, the first membrane etching hole has a diameter of about 3 μm to about 20 μm.