CRYSTAL GROWTH METHOD AND A SUBSTRATE FOR A SEMICONDUCTOR DEVICE

CRYSTAL GROWTH METHOD AND A SUBSTRATE FOR A SEMICONDUCTOR DEVICE

A crystal growth method of the present disclosure includes: preparing a crystal growth-derived-layer forming substrate including (a) a substrate having a surface layer, (b) a mask pattern which is formed on the surface layer and which includes a plurality of strip bodies, and (c) a plurality of crys...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: DOUMOTO, Chiaki, NISHIMURA, Takehiro
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
BASIC ELECTRIC ELEMENTS
CHEMISTRY
CRYSTAL GROWTH
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SEMICONDUCTOR DEVICES
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A crystal growth method of the present disclosure includes: preparing a crystal growth-derived-layer forming substrate including (a) a substrate having a surface layer, (b) a mask pattern which is formed on the surface layer and which includes a plurality of strip bodies, and (c) a plurality of crystal growth-derived layers which are formed between and on the plurality of stripe bodies so as to have gaps therebetween above the plurality of strip bodies and which differ in lattice constant from the substrate having the surface layer; and growing semiconductor layers on the plurality of crystal growth-derived layers. The semiconductor layers are respectively grown on the plurality of crystal growth-derived layers formed so as to be separated from each other, and semiconductor layers on two adjacent ones of the plurality of crystal growth-derived layers are separated from each other.