HETEROGENEOUS HEIGHT LOGIC CELL ARCHITECTURE
A MOS IC includes first and second sets of adjacent transistor logic, each of which include collinear gate interconnects extending in a first direction with the same gate pitch. The first set of transistor logic has a first cell height h1 and a first number of Mx layer tracks that extend unidirectio...
Gespeichert in:
Hauptverfasser: | , , , |
---|---|
Format: | Patent |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | A MOS IC includes first and second sets of adjacent transistor logic, each of which include collinear gate interconnects extending in a first direction with the same gate pitch. The first set of transistor logic has a first cell height h1 and a first number of Mx layer tracks that extend unidirectionally in a second direction orthogonal to the first direction. The second set of transistor logic has a second cell height h2 and a second number of Mx layer tracks that extend unidirectionally in the second direction, where h2>h1 and the second number of Mx layer tracks is greater than the first number of Mx layer tracks. At least one of a height ratio hR=h2/h1 is a non-integer value or a subset of the first set of transistor logic and a subset of the second set of transistor logic are within one logic cell. |
---|