METAL OXIDE LINER FOR CROSS-POINT PHASE CHANGE MEMORY CELL

METAL OXIDE LINER FOR CROSS-POINT PHASE CHANGE MEMORY CELL

Phase change memory material stacks having a metal oxide liner for memory integrated circuits, related systems, and methods of fabrication are disclosed. Such phase change memory material stacks include a phase change material and a switching device and the sidewalls of the phase change memory mater...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Chandrasekaran, Hari, Chung, Hoi-Sung, Venkatasubramanian, Rajesh
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Phase change memory material stacks having a metal oxide liner for memory integrated circuits, related systems, and methods of fabrication are disclosed. Such phase change memory material stacks include a phase change material and a switching device and the sidewalls of the phase change memory material stacks are lined with a metal oxide to protect the material stacks during manufacture and use and to provide isolation between the material stacks.