DUAL CONTACT PROCESS WITH STACKED METAL LAYERS

Embodiments disclosed herein include complementary metal-oxide-semiconductor (CMOS) devices and methods of forming CMOS devices. In an embodiment, a CMOS device comprises a first transistor with a first conductivity type, where the first transistor comprises a first source region and a first drain region, and a first metal over the first source region and the first drain region. In an embodiment, the CMOS device further comprises a second transistor with a second conductivity type opposite form the first conductivity type, where the second transistor comprises a second source region and a second drain region, a second metal over the second source region and the second drain region, and the first metal over the second metal.