METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING METHOD, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM

There is included (a) loading a substrate into a process container; (b) performing a process of forming a film on the substrate in the process container by alternately or simultaneously performing, a predetermined number of times, supplying a precursor gas from a first supplier to the substrate, and supplying a reaction gas from a second supplier to the substrate; (c) unloading the processed substrate from an interior of the process container; and (d) oxidizing at least one part of a film formed inside the process container in (b) so as to change the at least one part into an oxide film in a state in which the processed substrate is unloaded from the interior of the process container, wherein in (d), an oxygen-containing gas and a hydrogen-containing gas are supplied into the process container and at that time, the hydrogen-containing gas is supplied toward the first supplier.