FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING MOLYBDENUM NITRIDE METAL GATES AND GATE DIELECTRICS WITH A DIPOLE LAYER

FABRICATION OF GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING MOLYBDENUM NITRIDE METAL GATES AND GATE DIELECTRICS WITH A DIPOLE LAYER

Gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nano...

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Bibliographische Detailangaben
Hauptverfasser: BAUMGARTEL, Lukas, ACTON, Orb, LAVRIC, Dan S, O'BRIEN, Daniel B, GOLONZKA, Oleg, LEIB, Jeffrey S, OUELLETTE, Daniel G, CRUM, Dax M, GHANI, Tahir
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric. The P-type conductive layer includes molybdenum and nitrogen. A second gate stack is over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectric.