RC IGBT, Method of Producing an RC IGBT and Method of Controlling a Half Bridge Circuit

RC IGBT, Method of Producing an RC IGBT and Method of Controlling a Half Bridge Circuit

An RC IGBT includes an active region with an IGBT section and a diode section. In a plurality of control trenches of the RC IGBT, there are a plurality of IGBT control electrodes and, electrically isolated from the IGBT control electrodes, a plurality of plasma control electrodes, each of the IGBT c...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: Baburske, Roman
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:An RC IGBT includes an active region with an IGBT section and a diode section. In a plurality of control trenches of the RC IGBT, there are a plurality of IGBT control electrodes and, electrically isolated from the IGBT control electrodes, a plurality of plasma control electrodes, each of the IGBT control electrodes and plasma control electrodes being electrically isolated from both load terminals of the RC IGBT. The IGBT section includes both a first subset of the IGBT control electrodes and a first subset of the plasma control electrodes. The diode section includes a second subset of the plasma control electrodes.