METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

Described herein is a technique capable of forming a flat film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) forming a first layer on a substrate by performing a first layer forming cycle once or more, wherein the first layer formin...

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Bibliographische Detailangaben
Hauptverfasser:	JODA, Takuya, MIZUNO, Norikazu, OGAWA, Arito, KURIBAYASHI, Koei, HAYASAKA, Shogo
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Described herein is a technique capable of forming a flat film. According to one or more embodiments of the present disclosure, there is provided a technique that includes: (a) forming a first layer on a substrate by performing a first layer forming cycle once or more, wherein the first layer forming cycle includes: (a1) supplying a first element-containing gas to the substrate in a process chamber; and (a2) supplying a first reducing gas to the substrate a plurality of times, and wherein (a1) and (a2) are sequentially performed; and (b) forming a second layer on the first layer by performing a second layer forming cycle once or more after (a), wherein the second layer forming cycle includes: (b1) supplying a second element-containing gas to the substrate; and (b2) supplying a second reducing gas to the substrate, and wherein (b1) and (b2) are sequentially performed.