METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

According to one aspect thereof, there is provided a method of manufacturing a semiconductor device, including: forming an oxide film containing a predetermined element on a surface of a substrate provided with a pattern formed thereon by repeatedly performing a cycle including: (a) forming a first...

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Bibliographische Detailangaben
Hauptverfasser: NAGATOMI, Yoshimasa, NONOMURA, Kazuki, SUZAKI, Kenichi
Format: Patent
Sprache:eng
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Zusammenfassung:According to one aspect thereof, there is provided a method of manufacturing a semiconductor device, including: forming an oxide film containing a predetermined element on a surface of a substrate provided with a pattern formed thereon by repeatedly performing a cycle including: (a) forming a first layer containing the predetermined element by supplying a source gas containing the predetermined element from an outer periphery of the substrate toward the surface; and (b) forming an oxide layer containing the predetermined element by supplying an oxidizing gas from the outer periphery toward the surface, wherein (a) and (b) are performed non-simultaneously. A supply time of the oxidizing gas is selected such that a thickness distribution of the oxide film becomes a predetermined distribution.