MEMORY SYSTEM

According to one embodiment, a memory system includes a nonvolatile memory including a plurality of cell units, each of the plurality of cell units including a plurality of memory cells, and a memory controller. The memory controller is configured to: read first data from a first cell unit, using a first correction amount of a read voltage; identify an address of an error bit in the first data; update the first correction amount to a second correction amount, based on the first data and the address of the error bit of the first data; and read second data from a second cell unit different from the first cell unit, using a third correction amount based on the second correction amount.