METHOD FOR GROWING A SEMI-POLAR GALLIUM NITRIDE EPITAXIAL LAYER USING ALUMINUM NITRIDE / GALLIUM NITRIDE SUPERLATTICES

A method for growing a semi-polar gallium nitride epitaxial layer by inserting aluminum nitride and gallium nitride multi-layers includes the steps of cleaning m-sapphire substrates and activating the m-sapphire substrates by utilizing a combination of precursors and carrier gas. The method of growi...

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Bibliographische Detailangaben
Hauptverfasser:	BIN AZMAN SHAH, Mohd Adreen Shah, BIN KAMARUNDZAMAN, Anas, BIN ABU BAKAR, Ahmad Shuhaimi, AHMAD MAKINUDIN, Abdullah Haaziq, AL- ZUHAIRI, Omar Ayad Fadhil
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR CHEMISTRY CRYSTAL GROWTH METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Zusammenfassung:	A method for growing a semi-polar gallium nitride epitaxial layer by inserting aluminum nitride and gallium nitride multi-layers includes the steps of cleaning m-sapphire substrates and activating the m-sapphire substrates by utilizing a combination of precursors and carrier gas. The method of growing a layer of semi-polar gallium nitride epitaxial layer on m-sapphire substrates further includes nitridating for initiating growth sequence and depositing a nucleation layer. The film stack of aluminum nitride and gallium nitride multi-layers is grown to initiate growth of a super lattice layer on m-plane sapphire substrates. Subsequently, a layer of the undoped gallium nitride is deposited on the m-plane sapphire substrate.